The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14. 7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH and ISL73040SEH operate across the military temperature range from -55°C to +125°C and are offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.


  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level)
  • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
  • Internal 4.5V regulated gate drive voltage
  • Independent outputs for adjustable turn-on/turn-off speeds
  • Full military temperature range operation
  • TA = -55°C to +125°C
  • TJ = -55°C to +150°C
  • Radiation hardness assurance (wafer-by-wafer)
  • High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
  • Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
  • No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
  • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • Electrically screened to DLA SMD 5962-17233

Product Options

Part Number Part Status Pkg. Type Carrier Type MOQ DLA SMD Buy Sample
Active CLCC Tray 1
Active CLCC Tray 1 5962R1723301VXC
Active 100 5962R1723301V9A
Active Die Waffle Pack 1 5962R1723301V9A


Title language Type Format File Size Date
Datasheets & Errata
ISL70040SEH, ISL73040SEH Datasheet Datasheet PDF 1.19 MB
Application Notes & White Papers
AN9867: End of Life Derating: A Necessity or Overkill Application Note PDF 338 KB
Advantages of Using Gallium NitrideFETs in Satellite Applications White Paper PDF 548 KB
Wafer by Wafer Low Dose Rate Acceptance White Paper White Paper PDF 533 KB
PA18030 - Correction to the ISL70040SEH and ISL73040SEH datasheet for Standard Microcircuit Drawing (SMD) 5962-1723301 and 5962-1723302 Product Advisory PDF 356 KB
PCN18008 - Part Marking Change for the Listed QML Products Product Change Notice PDF 846 KB
Intersil Space Products Brochure Brochure PDF 3.14 MB
Intersil Commercial Lab Services Brochure PDF 364 KB
ISL70040SEHEV3Z Design Files Design File ZIP 589 KB
ISL70040SEHEV2Z Design Files Design File ZIP 558 KB
ISL73040SEHEV4Z User Guide Manual PDF 1.11 MB
ISL70040SEHEV2Z User Guide Manual PDF 853 KB
ISL70040SEHEV3Z User Guide Manual PDF 654 KB
ISL70040SEH Steady State iSim Model Model SXSCH 104 KB
ISL70040SEH, ISL73040SEH PSPICE Model Model ZIP 13 KB
Standard Microcircuit Drawing 5962-17233 (ISL70040SEH, ISL73040SEH) Other 0 KB
ISL70040SEH Neutron Test Report Report PDF 316 KB
ISL70040SEH Total Dose Test Report Report PDF 426 KB
ISL70040SEH, ISL73040SEH SEE Test Report Report PDF 251 KB

Software & Tool Pages

Title Type Description Company
iSim:PE Offline Simulation Tool Simulator iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs. Renesas

Boards & Kits

Part Number Title Type Company
ISL70040SEHEV2Z Radiation Hardened Low-Side GaN FET Driver and GaN FET Evaluation Board Evaluation Renesas
ISL70040SEHEV3Z Radiation Hardened Low-Side GaN FET Driver and GaN FET Evaluation Board Evaluation Renesas

News & Additional Resources

Type Date Sort ascending
Low Dose Rate Acceptance Testing Page Mar 25, 2020
Standard Data Package Page Mar 19, 2020
Rad Hard SMD Test Flow Page Mar 19, 2020
Rad Hard Test Reports Page Mar 19, 2020