The F5280 is a 4-channel TRX half-duplex silicon IC designed using a SiGe BiCMOS process for 5G phased-array applications at n257/n261 bands. The core IC has flexible gain and phase control on each channel to achieve fine beam steering and gain compensation between radiating channels. The core design includes standard SPI protocol that operates up to 50MHz with fast beam-steering modes.


  • 25GHz to 31GHz operation
  • 4 radiation channels
  • 100ns typical RF switch Tx/Rx mode switching time
  • 20ns typical gain and phase settling time
  • 3° typical RMS phase error
  • 0.4dB typical RMS gain error
  • Advanced SPI with 4 state memory
  • 6-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory
  • Supply voltage: +2.3V to +2.7V
  • -40°C to +105°C ambient operating temperature range
  • 3.6 × 3.6 mm, 49-BGA package






Type Title Date
Datasheet - Short-form PDF 151 KB
Guide PDF 2.24 MB
Product Brief PDF 728 KB
3 items

Design & Development


mmWave 5G Front Ends with Dynamic Array Power (DAP™) Optimization Deliver Differentiated Designs

Tumay delivers an overview of designing mmWave 5G phased arrays and how to differentiate your designs with the unique features of Renesas active beamforming ICs.