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パッケージ情報

Pkg. Type T-LBGA
Pkg. Code pkg_10456
Lead Count (#) 180
Pkg. Dimensions (mm) 18.5 x 14 x 1.374

環境及び輸出分類情報

ECCN (US) 5A002
RoHS (UPD48011318FF-FH16-FF1-A) 英語日本語
Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL)
HTSUS (US)

製品スペック

Pkg. Type T-LBGA
Carrier Type Tray
Architecture Low Latency DRAM-III
Burst Length (Words) 2
Data Width (bits) 18000
Density (Kb) 1100000
Frequency (Max) (MHz) 600
I/O Voltage (V) 1 - 1
Lead Compliant Yes
Lead Count (#) 180
Length (mm) 18
MIN Frequency (MHz) 400
MOQ 1
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 18 x 14 x 1.374
Supply Voltage (V) 1.5 - 1.5
Tape & Reel No
Thickness (mm) 1.374
Width (mm) 14
tRC (ns) 13.3

説明

Support is limited to customers who have already adopted these products.

Low Latency DRAM is our newest large-density memory boasting high performance. Incorporating high-performance technology used in our synchronous SRAM and the pseudo-SRAM technology used in mobile-specified RAM, Low Latency DRAM is ideal for use in various networking applications. With a Fast random access time-and data latency lower than other DRAM products-Low Latency DRAM realizes extremely high performance compared to commodity DRAM. Those features, combined with large density and lower cost per bit compared to SRAM solutions make Low Latency DRAM an attractive choice for use in next-generation, high-performance networking products.