The radiation hardened IS-2100ARH, IS-2100AEH are high-frequency, 130V half-bridge N-Channel MOSFET driver ICs, which are functionally similar to industry-standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).


  • Electrically screened to DLA SMD # 5962-99536
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
  • Maximum total dose: 300krad(Si)
  • DI RSG process provides latch-up immunity
  • SEU rating: 82MeV/mg/cm2
  • Vertical device architecture reduces sensitivity to low dose rates
  • Bootstrap supply maximum voltage to 150V
  • Drives 1000pF load at 1MHz with rise and fall times of 30ns (typical)
  • 1.5A (typical) peak output current
  • Independent inputs for non-half bridge topologies
  • Low DC power consumption: 60mW (typical)
  • Operates with VDD = VCC over 12V to 20V range
  • Low-side supply undervoltage protection




  • High frequency switch-mode power supplies
  • Drivers for inductive loads
  • DC motor drivers


Design & Development