UPA2690T1R

Nch/Pch Dual Power MOSFET 20V 4.0A 42mohm 6pinHUSON2020

Support for high-efficiency drive and low heat design

Recommended Product
UPA2690T1R-E2-AX
Production Status
Mass Production

OVERVIEW

The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

KEY FEATURES

    • N-channel 2.5V, P-channel 1.8V drive available
    • Low on-state resistance
      N-channel
      RDS(on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
      RDS(on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
      P-channel
      RDS(on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
      RDS(on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
      RDS(on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
    • Built-in gate protection diode
    • Lead-free and Halogen-free

PARAMETRICS

Parameters
UPA2690T1R
Basic Information
Production Status
Mass Production
PLP
PLP (Refer to Orderable Parts)
Package Type
6pinHUSON2020
Nch/Pch
Nch/Pch
Number of Channels
Dual
VDSS (V) max.
20
ID (A)
4
RDS (ON) (mohm) max. @2.5V or 1.8V
62
RDS (ON) (mohm) max. @4V or 4.5V
42
Ciss (pF) typ.
330
Vgs (off) (V) max.
1.5
VGSS (V)
12
Pch (W)
1.5
Application
Industrial, Consumer Use
Mounting Type
Surface Mount
QG (nC) typ.
4.5

You can find an explanation of orderable part numbers here.

 

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