Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching
  • Operation frequency (50Hz ≤ f ˂ 20kHz)
  • Not guarantee short circuit withstand time

descriptionDocumentation

Title language Type Format File Size Date
Datasheets & Errata
star RJP65T54DPM-A0 Data Sheet (650V - 30A - IGBT Application: Partial switching circuit) Datasheet PDF 520 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Discrete & Power Devices Brochure Brochure PDF 1.92 MB
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB