Overview

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching
  • Operation frequency (50Hz ≤ f ˂ 20kHz)
  • Not guarantee short circuit withstand time

Applications

Documentation

Title Type Date
PDF520 KB
Datasheet
PDF648 KB日本語
Application Note
PDF506 KB日本語
Application Note
PDF941 KB日本語
Application Note
PDF1.05 MB日本語
Application Note
PDF4.91 MB日本語
Brochure
PDF1.92 MB
Brochure
PDF1.32 MB
Brochure

Design & Development

Models

Support