Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 20 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
  • Operation frequency (20kHz ≤ f ˂ 100kHz)
  • Not guarantee short circuit withstand time

Product Options

Orderable Part ID Part Status Type Carrier Type Buy Sample
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Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
RJP65T43DPM Data Sheet (650V - 20A - IGBT / Application: Power Factor Correction circuit ) Datasheet PDF 313 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 402 KB
TO-247plus外形について Application Note PDF 655 KB
TO-247plus Package Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Motor Solutions Catalog 日本語, 简体中文 Brochure PDF 2.69 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB