Overview

Description

The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 208 KB
Guide PDF 2.65 MB
Application Note PDF 3.23 MB 日本語
Product Reliability Report PDF 223 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
6 items

Design & Development

Models