Overview

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The µ PA679TB is a switching device, which can be driven directly by a 2. 5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

  • 2.5 V drive available
  • Low on-state resistance N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
  • Two MOS FET circuits in same size package as SC-70

Documentation

= Featured Documentation
Type Title Date
Datasheet
UPA679TB Data Sheet (G16615EJ1V0DS00)
PDF 272 KB 日本語
Guide
Power Discretes Part Number Guide
PDF 2.65 MB
Product Change Notice
Plating Fab change of Yamagata Denshi Products (BL202200673)
PDF 116 KB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
5 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    UPA679TB(0)-T1-A
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    memory
    view_in_ar
    		SSP
    UPA679TB-T1-A
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    memory
    view_in_ar
    		SSP
    UPA679TB-T2-A
    circleObsolete
    memory
    view_in_ar
    		SSP
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