Overview

Description

The NP100N04MUH, NP100N04NUH, NP100N04PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP100N04MUH, NP100N04NUH RDS(on) = 3.5 mΩ MAX. (VGS = 10 V, ID = 50 A) NP100N04PUH RDS(on) = 3.1 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • High avalanche energy, High avalanche current
  • Low input capacitance Ciss = 6800 pF TYP. (VDS = 25 V)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 353 KB
Guide PDF 2.65 MB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
4 items

Design & Development

Models