Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 150 A, VGE = 15 V, Tc = 25°C)
  • High-Speed Switching
  • Short circuit withstands time (10 μs min.)

descriptionDocumentation

Title language Type Format File Size Date
star RJP65S07DWA/RJP65S07DWS Datasheet Datasheet PDF 118 KB
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Discrete & Power Devices Brochure Brochure PDF 1.92 MB
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB