Overview

Description

The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 64 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
  • Low input capacitance Ciss = 1650 pF TYP.
  • Built-in gate protection diode

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.31 MB
Guide PDF 2.65 MB
Application Note PDF 3.23 MB 日本語
Product Reliability Report PDF 224 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
6 items

Design & Development

Models