Overview

Description

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The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
  • Low Ciss: Ciss = 4600 pF TYP.
  • Built-in gate protection diode

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 282 KB
Guide PDF 2.65 MB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
4 items

Design & Development

Models