Overview

Support is limited to customers who have already adopted these products.

The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
  • Low Ciss: Ciss = 4600 pF TYP.
  • Built-in gate protection diode

Documentation

= Featured Documentation
Type Title Date
Datasheet
2SJ673 Data Sheet
PDF 282 KB
Guide
Power Discretes Part Number Guide
PDF 2.65 MB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
4 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    2SJ673(0)-AZ
    circleObsolete
    memory
    view_in_ar
    		MP-45F
    2SJ673-AZ
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    memory
    view_in_ar
    		MP-45F
    2SJ673-S12-AZ
    circleObsolete
    memory
    view_in_ar
    		MP-45F
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