In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation low-side GaN FET driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation tolerant GaN FET drivers are used for DC/DC power supplies in small satellites (smallsats) and launch vehicles.

Design Resources

Taking Advantage of GaN in Small Satellite New Space Applications

Taking Advantage of GaN in Small Satellite “New Space” Applications

Learn how Renesas GaN FETs allow for more efficient switching, higher frequency operation, reduced gate drive voltage, and smaller solution sizes in satellite applications.

Knowledge Base

Rad Tolerant Power FAQs

Find answers to common questions, support articles and development hints.


FAQs

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Learn about the Intersil radiation-tolerant plastic-package ICs designed to support the emerging field of small satellites.
2:56
Learn about the Intersil radiation-tolerant plastic-package ICs designed to support the emerging field of small satellites.
2:56
Learn about the Intersil radiation-tolerant plastic-package ICs designed to support the emerging field of small satellites.

Evaluation Tools

ISL71040MEV1Z Radiation Tolerant Low-Side GaN FET Driver Eval Board

Evaluation Kit

ISL71040MEV1Z

The ISL71040MEV1Z evaluation platform is designed to evaluate the ISL71040M radiation tolerant low-side GaN FET driver.

ISL71043MEVAL1Z Radiation Tolerant Single-Ended Current Mode PWM Controller Eval Board

Evaluation Kit

ISL71043MEVAL1Z

The ISL71043MEVAL1Z eval board is used to evaluate the ISL71043M PWM controller and ISL71040M GaN FET driver in a flyback power supply configuration.