The ISL71043M is a radiation-hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. The ISL71043MEVAL1Z evaluation board is a flyback power supply. The board features up to 13.2V VDD operation, low operating current, 90μA typical start-up current, adjustable operating frequency to 1MHz, and high peak current drive capability with 50ns rise and fall times.
The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has inverting (INB) and non-inverting (IN) inputs to satisfy requirements for both inverting and non-inverting gate drives with a single device. The ISL71040M has a 4.5V gate drive voltage (VDRV) that is generated using an internal regulator, which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN and INB) and keeps OUTL turned on, ensuring that the GaN FET is in an OFF state when VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage allowing the ISL71040M inputs to be connected directly to most PWM controllers. The split outputs of the ISL71040M offer the flexibility to independently adjust the turn-on and turn-off speeds by adding additional impedance to the turn-on and turn-off paths.
- 24W flyback power supply
- Option to power the ISL71043M and ISL71040M using the auxiliary winding on a flyback transformer or separate power supply.
- VOUT within 1% of 12V with 0A to 2A load step.
- Tight line/load regulation: 0.003%/0.16%
- Current mode switching power supplies
- Isolated buck and flyback regulators
- Boost regulators
- Direction and speed control in motors
- Control of high current FET drivers
Taking Advantage of GaN in Small Satellite “New Space” Applications
Learn how Renesas GaN FETs allow for more efficient switching, higher frequency operation, reduced gate drive voltage, and smaller solution sizes in satellite applications.
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