• Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching
  • Operation frequency (50Hz ≤ f ˂ 20kHz)
  • Not guarantee short circuit withstand time

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Datasheets & Errata
star RJP65T54DPM-A0 Data Sheet (650V - 30A - IGBT Application: Partial switching circuit) Datasheet PDF 520 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB