These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
  • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

Product Options

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Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
NP40N10YDF, NP40N10VDF, NP40N10PDF Datasheet Datasheet PDF 156 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 1.89 MB
Other
PowerMOSFET & IPD Brochure PDF 2.24 MB