Overview

Description

The RBA250N04AHPF-4UA01 is an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for high current switching applications.

Features

  • Super low on-state resistance
    • RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 12900pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 639 KB
Guide PDF 2.65 MB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models