Overview

Description

The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
  • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Documentation

Type Date
PDF 219 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 1.71 MB Guide
PDF 223 KB Product Reliability Report
PDF 2.24 MB Brochure
5 items

Design & Development

Models

Support