The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.


  • Low on-state resistance RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
  • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
Active HSON Embossed Tape
Active HSON Embossed Tape

Documentation & Downloads

Title language Type Format File Size Date
Datasheets & Errata
NP23N06YDG Data Sheet Datasheet PDF 219 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 1.89 MB
PowerMOSFET & IPD Brochure PDF 2.24 MB