The ISL73041SEH is a PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON), high Qgs enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch and high gate drive current provide a compact and robust GaN FET half bridge driver.

The ISL73041SEH is designed to interface directly to the ISL73847SEH dual phase PWM buck controller to create a high efficiency point-of-load regulator to power many of the latest low voltage high current FPGA and DSP digital core rails.

The ISL73041SEH is offered in a 16 Ld Ceramic Leadless Chip Carrier (CLCC) hermetic package. It is specified to operate across an ambient temperature range of -55 °C to +125 °C.


  • Up to 20V bootstrap voltage half-bridge driver
  • Programmable 4.5V to 5.5V gate drive voltage
  • Single tri-level PWM input control
  • Separate source and sink driver outputs for independent gate turn-on and turn-off control
  • High-side peak driver current: 5A
  • Low-side peak driver current: 10A
  • Separate high-side and low-side programmable dead time control
  • Fast propagation delay with low mismatch
  • Full military temperature operation -55 °C to 125 °C ambient range
  • 16 Ld Hermetic CLCC Package




  • High current DC/DC Point-of-Load (POL) for FPGA and DSP supply rails
  • 12V to 1V POL regulation
  • GaN FET motor driver


Type Title Date
Datasheet PDF 1.59 MB
Report PDF 547 KB
Report PDF 549 KB
Application Note PDF 1.13 MB
Brochure PDF 4.85 MB
Report PDF 5.94 MB
Application Note PDF 414 KB
Technical Brief PDF 336 KB
White Paper PDF 533 KB
9 items

Design & Development

Software & Tools

Software Downloads

Type Title Date
Software & Tools - Other XLSX 269 KB
1 item

Boards & Kits

Boards & Kits