Overview

Description

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching
applications.

Features

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Applications

Documentation

Title Type Date
PDF659 KB
Datasheet
PDF3.27 MB日本語
Application Note
PDF2.24 MB
Brochure
PDF1.71 MB
Guide

Design & Development

Models

Support