概要

説明

The F1423 RF amplifier provides 13.1dB gain with +41.8dBm OIP3 and 5.1dB noise figure at 2000MHz. This device uses a single 5V supply and 120mA of ICC. The F1423 is packaged in a 4mm x 4mm, 24-VFQFPN package with 50Ω differential RF input and 50Ω single-ended RF output impedances for ease of integration into the signal path.

特長

  • Broadband 600MHz to 3000MHz
  • 13.1dB typical gain at 2000MHz
  • 5.1dBNF at 2000MHz
  • +41.8dBm OIP3 at 2000MHz
  • +21.5dBm output P1dB at 2000MHz
  • Single 5V supply voltage
  • ICC = 120mA
  • Up to +105 °C TCASE operating temperature
  • 50Ω differential input impedance
  • 50Ω single-ended output impedance
  • Positive gain slope for board loss compensation
  • Standby mode for power savings

製品比較

アプリケーション

アプリケーション

  • Multi-mode, Multi-carrier Transmitters
  • GSM850/900 Base Stations
  • PCS1900 Base Stations
  • DCS1800 Base Stations
  • WiMAX and LTE Base Stations
  • UMTS/WCDMA 3G Base Stations
  • PHS/PAS Base Stations
  • Public Safety Infrastructure

ドキュメント

分類 タイトル 日時
データシート PDF 4.64 MB
製品変更通知 PDF 674 KB
ガイド PDF 2.24 MB
製品変更通知 PDF 771 KB
製品概要 PDF 983 KB
製品変更通知 PDF 45 KB
6 items

設計・開発

ボード&キット

ボード&キット

モデル

ビデオ&トレーニング

IDT RF Product Benefits Overview

This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.

Transcript

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.