The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching
applications.

Features

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
Active MP-25ZU Embossed Tape
Availability

Documentation

Title language Type Format File Size Date
Datasheets & Errata
RBA250N10CHPF-4UA02 100V – 250A – N-channel Power MOS FET Application : Automotive Datasheet PDF 659 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 1.89 MB
Other
PowerMOSFET & IPD Brochure PDF 2.24 MB