概要

Description

The F1912 is part of a family of Glitch-FreeTM DSAs which offers very high reliability due to its monolithic silicon die construction in a compact 4mm x 4mm 20-pin package QFN package.  The silicon design has very low insertion loss and low distortion (> +60 dBm IP3I.)  The device has pinpoint accuracy and settles to final attenuation value within 400 nsec.  Most importantly, the F1912 includes IDT’s Glitch-FreeTM technology which results in low overshoot & ringing during MSB transitions

特長

  • Serial & 6bit Parallel Interface
  • 31.5dB Control Range
  • 0.5dB step
  • Glitch-FreeTM, low transient overshoot
  • Attenuation Error < 0.22 dB @ 2 GHz
  • Low Insertion Loss < 1.4 dB @ 2 GHz
  • Ultra linear >+63 dBm IP3I
  • 500 ns switching speed
  • Stable Integral Non-Linearity over temperature
  • 3.0 V to 5.25 V supply
  • 1.8 V or 3.3 V control logic
  • -55°C to +105°C operating temperature 
  • 4mm x 4mm Thin QFN 20-pin package
  • Low Current Consumption  550µA typ

ドキュメント

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IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.