ISL70040SEHEV2Z, ISL70040SEHEV3Z

Radiation Hardened Low-Side GaN FET Driver and GaN FET Evaluation Boards

概要

The ISL70040SEHEV2Z and ISL70040SEHEV3Z evaluation platforms are designed to evaluate the ISL70040SEH alongside the ISL70023SEH and ISL70024SEH.

The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. It operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gate drive within a single device.

The ISL70040SEH has a 4.5V gate drive voltage (VDRV) that is generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB), and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The inputs of the ISL70040SEH can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the inputs of the ISL70040SEH to be connected directly to most PWM controllers. The split outputs of the ISL70040SEH offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths.

The 100V ISL70023SEH and 200V ISL70024SEH are N-channel enhancement mode GaN power transistors. The GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.

主な機能

  • Wide VDD range single
    • 4.5V to 13.2V
  • Location provided for load resistors to switch the GaN FET with a load
  • SMA connector on the gate drive voltage to analyze the gate waveforms
  • Drain/Source sense test points to analyze the drain to source waveforms
  • Banana jack connectors for power supplies and drain/source connections

アプリケーション

  • Switching regulation
  • Motor drives
  • Relay drives
  • Inrush protection
  • Down hole drilling
  • High reliability industrial
  • Flyback and forward converters
  • Boost and PFC converters
  • Secondary synchronous FET drivers

ISL70040SEHEV3Z GaN FET Driver and GaN FET Evaluation Board

ISL70040SEHEV3Z GaN FET and Driver Evaluation Board

関連ビデオ

3:56
ルネサスは、新しいGaN製品ファミリーにより窒化ガリウムへの飛躍的な技術向上を実現します。
3:00
Learn why the space industry has shifted concern to the effects of long-term, low dose radiation on ICs and how Renesas is addressing this change.
3:56
ルネサスは、新しいGaN製品ファミリーにより窒化ガリウムへの飛躍的な技術向上を実現します。
3:00
Learn why the space industry has shifted concern to the effects of long-term, low dose radiation on ICs and how Renesas is addressing this change.
3:56
ルネサスは、新しいGaN製品ファミリーにより窒化ガリウムへの飛躍的な技術向上を実現します。
3:00
Learn why the space industry has shifted concern to the effects of long-term, low dose radiation on ICs and how Renesas is addressing this change.

ツール情報

Tools Orderable Part Number (s) Production Status Manufacturer Suggested Single Tool Price
SPQ
Description Distributor Stock Distributors Distributor Purchase
ISL70040SEHEV3Z 量産中 Renesas call 1 0 Call
ISL70040SEHEV2Z 量産中 Renesas call 1 0 Call

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Disclaimer: THIS MATERIAL IS PROVIDED “AS-IS” FOR EVALUATION PURPOSES ONLY. RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (collectively, “Renesas”) DISCLAIM ALL WARRANTIES, INCLUDING WITHOUT LIMITATION, FITNESS FOR A PARTICULAR PURPOSE AND MERCHANTABILITY. Renesas provides evaluation platforms and design proposals to help our customers to develop products. However, factors beyond Renesas' control, including without limitation, component variations, temperature changes and PCB layout, could significantly affect the product performance. It is the user’s responsibility to verify the actual circuit performance.