The RBA250N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications.


  • Super low on-state resistance
    • RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 12900pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

tuneProduct Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
Active MP-25ZU Embossed Tape


Title language Type Format File Size Date
Datasheets & Errata
star 40V – 250A – N-channel Power MOS FET Application : Automotive Datasheet PDF 639 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 2.00 MB
PowerMOSFET & IPD Brochure PDF 2.24 MB