Overview

Description

The NP90N04MUH, NP90N04NUH, NP90N04PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP90N04MUH, NP90N04NUH RDS(on) = 4.1 mΩ MAX. (VGS = 10 V, ID = 45 A) NP90N04PUH RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • High avalanche energy, High avalanche current
  • Low input capacitance Ciss = 5500 pF TYP. (VDS = 25 V)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 353 KB
Guide PDF 1.71 MB
Brochure PDF 2.24 MB
3 items

Design & Development

Models