Overview

Description

The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 2.95 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

Applications

Documentation

Document title Document type Type Date Date
PDF 266 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
PDF 226 KB Product Reliability Report
5 items

Design & Development

Models

Support