40 V – 90 A – N-channel Power MOS FET
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Overview
Description
The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Super low on-state resistance RDS(on) = 2.95 mΩ MAX. (VGS = 10 V, ID = 45 A)
- Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
Applications
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Product Options
Processing table
| MP-25ZP | TO-263 / D2PAK | Embossed Tape | Get Samples, |
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