Overview

Description

The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 2.95 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

Applications

Documentation

Title Type Date
PDF266 KB
Datasheet
PDF3.23 MB日本語
Application Note
PDF2.24 MB
Brochure
PDF1.71 MB
Guide
PDF226 KB
Product Reliability Report

Design & Development

Models

Support