Support is limited to customers who have already adopted these products.

The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
  • Low Ciss: Ciss = 4600 pF TYP.
  • Built-in gate protection diode

Product Options

Orderable Part ID Part Status Pkg. Type Carrier Type Buy Sample
2SJ673(0)-AZ
Obsolete MP-45F
Availability
2SJ673-AZ
Not Recommended for New Designs MP-45F
Availability
2SJ673-S12-AZ
Not Recommended for New Designs MP-45F
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
2SJ673 Data Sheet Datasheet PDF 282 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 1.89 MB
Other
PowerMOSFET & IPD Brochure PDF 2.24 MB