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The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.
- Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
- Low Ciss: Ciss = 4600 pF TYP.
- Built-in gate protection diode