Overview

Description

The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 47 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 mΩ MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 mΩ MAX. (VGS = –4.5 V, ID = –10 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Documentation

Title Type Date
PDF120 KB
Datasheet
PDF3.23 MB日本語
Application Note
PDF2.24 MB
Brochure
PDF1.71 MB
Guide
PDF222 KB
Product Reliability Report

Design & Development

Models

Models

Title Type Date
Model - SPICE

Support