60 V – 16 A – N-channel Power MOS FET
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Overview
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
- Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified
Applications
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Product Options
Processing table
| HSON | Power SON-8 5x6 | Embossed Tape | Get Samples, |
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