Space & Harsh Environment

In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation low-side GaN FET driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation tolerant GaN FET drivers are used for DC/DC power supplies in small satellites (smallsats) and launch vehicles.

Product Selection Table

    Processing table
    Input Voltage (Min) (V)
    Input Voltage (Max) (V)
    Gate Drive (V)
    UVLO Rising (V)
    UVLO Falling (V)
    VIH (V)
    VIL (V)
    RONP (Ohms) (Ohms)
    RONN (Ohms) (Ohms)
    Low Dose Rate (LDR) (krad (Si))
    DSEE (SEL, SEB, etc.) (MeV*cm2/mg)
    Lead Count (#)
    Pkg. Type
    Part Number
    ISL71040M
    Radiation Tolerant Low-Side GaN FET Driver    		 4.5 13.2 4.5 3.98 3.74 1.7 1.4 2.2 0.5 30 43 8 TDFN
    ISL71441M
    Radiation Tolerant 12V Half-Bridge GaN FET Driver    		 4.75 13.2 5.5 4.6 4.55 1.8 1.5 50 43 20 QFN
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    Documentation

    Radiation-Tolerant Plastic-Package ICs Overview

    Learn about Intersil's family of radiation-tolerant plastic-package ICs designed to support the emerging field of small satellites that will provide solutions such as high-speed Internet connections to hundreds of millions of users in communities, governments, and businesses worldwide. These ICs deliver rad-tolerance performance at a much lower cost point versus radiation assurance tested Class V (space level) products.

    Video List
    Radiation-Tolerant Plastic-Package ICs Overview

    News & Blog Posts

    Renesas Develops Complete Power Management Solution for AMD Space-Grade Versal Adaptive SoC News Jul 19, 2023

    Tools & Resources

    Space & Harsh Environment FAQs