Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.

Renesas' radiation hardened portfolio includes GaN FETs for satellites and other harsh environment applications. GaN FETs provide better conductivity and switching characteristics that enable several system benefits, including a reduction in system size, weight and power loss.


Title language Type Format File Size Date
Application Notes & White Papers
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 White Paper PDF 470 KB
R34AN0001EU: GaN FET Current Increase Due to Heavy Ion Testing Rev.1.00 Application Note PDF 178 KB
Advantages of Using Gallium NitrideFETs in Satellite Applications White Paper PDF 548 KB
AN9867: End of Life Derating: A Necessity or Overkill Application Note PDF 338 KB
Intersil Space Products Brochure Brochure PDF 3.16 MB
Intersil Commercial Lab Services Brochure PDF 364 KB

printNews & Additional Resources

Type Date Sort ascending
Low Dose Rate Acceptance Testing Page Mar 26, 2020
Standard Data Package Page Mar 20, 2020
Rad Hard SMD Test Flow Page Mar 20, 2020
Rad Hard Test Reports Page Mar 20, 2020