The ISL73033SLHEV1Z evaluation board is used to evaluate the performance of the ISL73033SLH radiation hardened Driver-GaN power stage. The ISL73033SLH integrates a 4.5V gate driver and a 100V, 7.5mΩ enhancement-mode Gallium Nitride FET (eGaN FET) in a single 8mm x 8mm BGA package. The device simplifies the printed circuit board (PCB) layout by integrating a driver plus GaN FET in one package and is designed for boost and isolated DC/DC converter topologies. The driver operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting logic drives with a single device.

The ISL73003SLHEV1Z evaluation board is configured as a common-source open drain 100V current sense load switch with three on board 2512 sized 220mΩ resistors in parallel (73.3mΩ).


  • Production testing and qualification follow the standard AS6294/1
  • 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
  • Wide driver bias range of 4.5V to 13.2V
  • Up to 16.5V logic inputs (regardless of VDD level)
    • Inverting and non-inverting inputs
  • Integrated driver optimized for enhancement-mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
  • Full military temperature range operation
    • TA = -55 °C to +125 °C
    • TJ = -55 °C to +150 °C
  • Radiation hardness assurance (lot-by-lot)
    • Low dose rate (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness for Driver (see the SEE test report)
    • No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
    • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • SEE hardness for GaN FET (see the SEE test report)
    • No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg



  • Flyback and forward converters
  • Boost and PFC converters
  • Secondary synchronous FET drivers


Type Title Date
Manual - Development Tools PDF 838 KB
Datasheet PDF 467 KB
2 items

Design & Development

Software & Tools

Software Downloads

Type Title Date
PCB Design Files ZIP 790 KB
1 item