The ISL72813SEH is a radiation hardened, high-voltage, high-current, driver circuit fabricated using the Renesas proprietary PR40 Silicon-on-Insulator (SOI) process technology to mitigate single-event effects. This device integrates 32 driver circuits that feature high-voltage, common emitter, and open-collector outputs with a 42V breakdown voltage and a peak current rating of 600mA. To further reduce solution size and increase system power density, the ISL72813SEH integrates a 5-bit to 32-channel decoder (plus enable pin) as well as level shifting circuitry to reference the output of the decoder to a negative voltage. This conveniently allows the user to select 1 of 32 available driver channels. The inputs to the decoder are TTL/CMOS compatible, allowing easy interface to CPUs, FPGAs or microprocessors. The ISL72813SEH operates across the military temperature range from -55 °C to +125 °C and is available in a 44 Ld hermetically sealed Ceramic Lead-Less Chip Carrier (CLCC) package.


  • Electrically screened to SMD 5962-17208
  • Acceptance tested to 100krad(Si) (HDR) and to 50krad(Si) (LDR) wafer-by-wafer
  • Integrated 5-bit to 32-channel decoder
  • Integrated level shifting circuit
  • High collector current outputs
  • High voltage outputs
  • Grounded metal lid
  • Full military temperature range operation
  • TA = -55 °C to +125 °C
  • TJ = -55 °C to +150 °C
  • Radiation tolerance
  • HDR (50rad(Si)/s to 300rad(Si)/s): 100krad(Si)
  • LDR (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness
  • No SEB/SEL LETTH, VCE = 33V: 86.4MeV•cm2/mg




Design & Development

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Boards & Kits