The Intersil ACS03MS is a radiation hardened quad 2-input NAND gate with open-drain outputs. The open-drain output can drive resistive loads from a separate supply voltage. The ACS03MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS logic family. The ACS03MS is supplied in a 14-lead Ceramic Flatpack (K suffix) or a Ceramic Dual In-Line package (D suffix).


  • Devices QML qualified in accordance with MIL-PRF-38535
  • Detailed electrical and screening requirements are contained in SMD# 5962-96703 and Renesas' Intersil QM Plan
  • 1.25 micron radiation hardened SOS CMOS
  • Total dose >300K RAD (Si)
  • Single Event Upset (SEU) immunity: <1 x 10-10 errors/bit/day (Typ)
  • SEU LET threshold >100 MEV-cm2/mg
  • Dose rate upset >1011 RAD (Si)/s, 20ns pulse
  • Dose rate survivability >1012 RAD (Si)/s, 20ns pulse
  • Latch-up free under any conditions
  • Military temperature range -55 °C to +125 °C
  • Significant power reduction compared to ALSTTL Logic
  • DC operating voltage range 4.5V to 5.5V
  • Input logic levels
    • VIL = 30% of VCC Max
    • VIH = 70% of VCC Min
  • Input current ≤ 1µA at VOL, VOH
  • Fast propagation delay 15ns (Max), 10ns (Typ)




Design & Development