The Intersil HCS11MS is a radiation hardened triple 3-input AND gate. A high on all inputs forces the output to a high state. The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS logic family. The HCS11MS is supplied in a 14-lead weld seal ceramic flatpack (K suffix) or a weld seal ceramic dual in-line package (D suffix).


  • 3 micron radiation hardened SOS CMOS
  • Total dose 200K or 1 Mega-RAD(Si)
  • Dose rate upset >1010 RAD(Si)/s 20ns pulse
  • Cosmic ray upset immunity <2 x 10-9 errors/gate day (Typ)
  • Latch-up free under any conditions
  • Military temperature range: -55 °C to +125 °C
  • Significant power reduction compared to LSTTL ICs
  • DC operating voltage range: 4.5V to 5.5V
  • Input logic levels
  • VIL = 30% of VCC Max
  • VIH = 70% of VCC Min
  • Input current levels Ii ≤5µA at VOL, VOH




Design & Development