The ISL70444SEH features four low-power amplifiers optimized to provide maximum dynamic range. This operational amplifier (op amps) features a unique combination of rail-to-rail operation on the input and output as well as a slew enhanced front-end that provides ultra fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it's periodic or momentary. The ISL70444SEH also offers low power, low offset voltage, and low-temperature drift, making it ideal for applications requiring both high DC accuracy and AC performance. With <5µs recovery for Single Event Transients (SET) (LETTH = 86. 4MeV•cm2/mg), the number of filtering components needed is drastically reduced. The ISL70444SEH is also immune to single event latch-up because it is fabricated using the Renesas proprietary PR40 Silicon On Insulator (SOI) process. The amplifier is designed to operate over a single supply range of 2. 7V to 40V or a split supply voltage range of ±1. 35V to ±20V. Applications for this amplifier include precision instrumentation, data acquisition, precision power supply controls, and process controls. The ISL70444SEH are available in a 14 Ld hermetic ceramic flatpack and die forms that operate across the temperature range of -55°C to +125°C.


  • Electrically screened to DLA SMD# 5962-13214
  • Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
  • Unity gain stable
  • Rail-to-rail input and output
  • Wide gain·bandwidth product: 19MHz
  • Wide single and dual supply range: 2.7V to 40V max
  • Low input offset voltage: 400µV
  • Low current consumption (per amplifier): 1.1mA, typ
  • No phase reversal with input overdrive
  • Slew rate - Large signal: 60V/µs
  • Operating temperature range: -55°C to +125°C
  • Radiation acceptance (see TID report)
    • High dose rate (50-300rad(Si)/s): 300krad(Si) (ISL70444SEH only)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness (see SEE report for details)
    • SEB LETTH (VS = ±21V): 86.4MeV•cm2/mg
    • SEL immune (SOI Process)




  • Precision instruments
  • Active filter blocks
  • Data acquisition
  • Power supply control
  • Process control


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