The F1490 is a high-gain, two-stage RF Amplifier designed to operate within the 1.8GHz to 6.4GHz frequency range. Using a single 5V power supply, the F1490 provides two selectable gain modes (35.5dB and 39.5dB), 2.5dB of Noise Figure and 24dBm OP1dB at 2.6GHz.
The F1490 is packaged in a 3 × 3 mm, 16-VFQFPN package, with matched 50Ω input and output impedances for ease of integration into the signal path.


  • RF range: 1.8GHz to 6.4GHz
  • 35.5dB typical gain at 2.6GHz in low-gain mode
  • 39.5dB typical gain at 2.6GHz in high-gain mode
  • 2.5dB NF at 2.6GHz
  • 50Ω single-ended input and output impedances
  • 5V power supply
  • 75mA quiescent current consumption
  • 1.8V Logic compatible Standby Mode for power savings
  • Operating temperature (TEPAD) range: -40°C to +115°C
  • 3 × 3 mm 16-VFQFPN package



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IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.