Overview

Support is limited to customers who have already adopted these products.

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Channel temperature 175 degree rating
  • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A)

Documentation

= Featured Documentation
Type Title Date
Datasheet
NP110N04PDG Data Sheet
PDF 244 KB
Guide
Power Devices Part Number Guide
PDF 1.71 MB
Product Reliability Report
NP-Series USMO4Nch-MP25 Reliability Report
PDF 227 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
5 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    NP110N04PDG-E1-AY
    circleNRND
    memory
    view_in_ar
    		MP-25ZP Embossed Tape
    NP110N04PDG-E1-AZ
    circleNRND
    memory
    view_in_ar
    		MP-25ZP Embossed Tape
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