Overview

Description

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The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 5 V power source.

Features

  • Directly driven by a 4.5 V power source.
  • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = -4.5 V, ID = -50 mA)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 154 KB
Brochure PDF 8.73 MB
Guide PDF 1.71 MB
Product Change Notice PDF 116 KB 日本語
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
6 items

Design & Development

Models