The RAA220001 is a high frequency MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. In the RAA220001, the upper and lower gates are both driven to an externally applied voltage that provides the capability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The RAA220001 has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature that is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) through a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This design is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.


  • Dual MOSFET drives for synchronous rectified bridge
  • Advanced adaptive zero shoot-through protection
  • Low standby bias current
  • 36V internal bootstrap switcher
  • Bootstrap capacitor overcharging prevention
  • Integrated high-side gate-to-source resistor to prevent from self turn-on due to high input bus dV/dt
  • Pre-POR overvoltage protection for start-up and shutdown
  • Power rails undervoltage protection
  • Expandable bottom copper pad for enhanced heat sinking
  • Dual flat no-lead (DFN) package
  • Near chip-scale package footprint; improves PCB efficiency and thinner in profile
  • Pb-free (RoHS compliant)




Type Title Date
Datasheet PDF 262 KB
Brochure PDF 8.73 MB
Product Change Notice PDF 179 KB
Product Change Notice PDF 326 KB
Application Note PDF 509 KB
Application Note PDF 397 KB
Application Note PDF 576 KB
7 items

Design & Development