Overview

Description

The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
  • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Documentation

Document title Document type Type Date Date
PDF 230 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
PDF 222 KB Product Reliability Report
5 items

Design & Development

Models

Support