Overview

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 9.6 mΩ MAX. (VGS = 10 V, ID = 23 A)
  • Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 281 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 226 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models

Support