Overview

Description

The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)
  • Low Ciss: Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 224 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 223 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models

Support