Overview

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
  • Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Documentation

Document title Document type Type Date Date
PDF 335 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
PDF 218 KB Product Reliability Report
5 items

Design & Development

Models

Support