These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
- Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
- Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified