These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
  • Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

tuneProduct Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
Active HSON Embossed Tape
Availability

descriptionDocumentation

Title language Type Format File Size Date
Datasheets & Errata
star NP16N06YLL (60 V - 16 A - N-channel Power MOS FET / Application: Automotive) Datasheet PDF 335 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 1.89 MB
Other
PowerMOSFET & IPD Brochure PDF 2.24 MB