60 V – 16 A – Dual N-channel Power MOS FET
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Overview
Description
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
- Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
Documentation
| Document title | Document type Type | Date Date | |
|---|---|---|---|
| PDF 541 KB | Datasheet | ||
| PDF 3.23 MB 日本語 | Application Note | ||
| PDF 2.24 MB | Brochure | ||
| PDF 1.71 MB | Guide | ||
| PDF 222 KB | Product Reliability Report | ||
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Product Options
Processing table
| HSON | Power SON-8 5x6 | Embossed Tape | Get Samples, | |
| HSON | Power SON-8 5x6 | Embossed Tape |
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