Renesas Electronics enables high intelligence, efficiency and Power Factor with DALI and DMX while reducing system cost.

Renesas' Solutions for LED Lighting

Solutions for LED Bulbs

Realises high efficiency of 92%, high power factor of 0.9 and high precision LED current control with 0.5% line regulation. Renesas contributes to the LED retrofit market development with dedicated semiconductor products for a wide range of high quality LED bulbs and tubes supporting specific regional requirements such as common platform solutions for various voltages (Vin). In addition Renesas optimised LED driver ICs support dimming and Thermal Shutdown Functions while the reduction of the system BOM cost is also enabled by the unique architecture of the chip.

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North America High Efficiency, Phase Dimming Solution (100 V)

Features:

  • Phase dimming solution for North American market (Vac = 85 V to 132 V)

Specifications:

  • Pin = 10 W
  • Efficiency: 85%
  • Power factor: 0.9 or more
  • Total harmonic distortion [THD]:20% or less
  • Output current ripple: 30% or less
  • Compatible with leading edge/trailing edge dimmers
  • NEMA SSL 6 compliant

Circuit DiagramR2A20135EVB-ND1 Circuit

Application Note

Application Note Recommended products High Resolution Circuit Diagram Calculation Sheet
R2A20135EVB-ND1

Driver IC : R2A20135SP
MOSFET : RJK4532DPD

   

Europe High Efficiency, Phase Dimming Solution (200 V)

Features:

  • Phase dimming solution for European market (Vac = 180 V to 264 V)

Specifications:

  • Pin = 10 W
  • Efficiency: 80% or more
  • Power factor: 0.9 or more
  • Output current ripple: 30% or less
  • Compatible with leading edge/trailing edge dimmers

Circuit DiagramR2A20135EVB-ND2 Circuit

Application Note

Application Note Recommended products High Resolution Circuit Diagram Calculation Sheet
R2A20135EVB-ND2/CRM mode Driver IC : R2A20135SP
MOSFET : RJK5032DP
   

Worldwide Input Voltage Solution

Features:

  • Solution for worldwide market (Vac = 85 V to 264 V)

Specifications:

  • Pin = 10 W
  • Efficiency: 85% or more
  • Power factor: 0.9 or more
  • Total harmonic distortion [THD]: 20% or less
  • Output current ripple: 30% or less

Circuit DiagramR2A20134EVB-NNWE Circuit

Application Note

Application Note Recommended products High Resolution Circuit Diagram Calculation Sheet
R2A20134EVB-NNWE Driver IC : R2A20134SP
MOSFET : RJK5032DPD
   

Worldwide High Efficiency, High Power Factor, Low THD Tube Solution

Features:

  • Isolated step-down/fly back circuit, worldwide input (Vac = 85 V to 264 V)

Specifications:

  • Pin = 18 W
  • Efficiency: 85% or more
  • Power factor: 0.95 or more
  • Total harmonic distortion [THD]: 20% or less
  • Output current ripple: 20% or less
  • IEC61000-3-2 Class-C support
  • CISPR15 support

Circuit DiagramR2A20134EVB-TINW Circuit

Application Note

Application Note Recommended products High Resolution Circuit Diagram Calculation Sheet
R2A20134EVB-TINW Driver IC : R2A20134SP
MOSFET : RJK5030DPD