The F1130 RF front-end offers 19dB gain with 3.5dB NF and +37dBm OIP3 performance. The digital step attenuator provides 30dB adjustment range in 2 dB steps via the SPI interface controller. For strong signal conditions, each RF amplifier can be bypass controlled via the SPI interface. The RF front-end output and mixer input signals are bonded to separate pins to allow interstage image-reject filtering.

Each of the dual mixer paths provide 9dB power gain, 10.3dB NF and +36dBm OIP3 performance. An external LO signal is applied to the mixer LO port. This device is packaged in a 7 × 7 mm 48-VFQFPN with 50Ω single-ended RF and LO inputs, and 200Ω differential IF output impedance for ease of integration. 


  • Dual path for MIMO systems
  • RF: 400MHz to 1100MHz
  • LO: 500MHz to 1300MHz
  • IF: 25MHz to 400MHz
  • Bypassable RF amplifiers for strong signal conditions
  • 19dB RF front-end power gain
  • +37dBm RF front-end OIP3 (Bypass OFF)
  • +43dBm RF front-end OIP3 (Bypass ON)
  • 3.5dB front-end NF at 900MHz
  • 9dB mixer power gain (HS LO)
  • +36dBm mixer OIP3
  • 30dB gain control range, 2dB steps
  • Total ICC = 360mA
  • 7 × 7 mm 48-VFQFPN package




Type Title Date
Datasheet PDF 1.29 MB
Guide PDF 2.24 MB
Product Change Notice PDF 550 KB
Product Brief PDF 1.12 MB
4 items

Design & Development

Boards & Kits

Boards & Kits


IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.