Overview

Description

The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Features

  • Power Supply 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
  • Clock Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart
  • I/O Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR read and write operation HSTL I/O User programmable output impedance PLL circuitry for wide output data valid window and future frequency scaling
  • Function Four-tick burst for reduced address frequency Internally self-timed write control Simple control logic for easy depth expansion JTAG 1149.1 compatible test access port
  • Package 165 FBGA package (13 x 15 x 1.4 mm)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 853 KB
Guide PDF 471 KB 日本語
Product Change Notice PDF 4.86 MB 日本語
Brochure PDF 1.79 MB
Product Change Notice PDF 3.74 MB 日本語
Product Change Notice PDF 1.46 MB 日本語
6 items

Design & Development

Models